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       Symbol Min Typ Max Unit Parameter Conditions Forward voltage CDBQR42/43 CDBQR42 CDBQR43 CDBQR42 CDBQR43 IF = 1 0mA IF = 2 00mA IF = 5 0mA IF = 2 mA IF = 1 5mA VF V 0.4 1 0.65 0.33 0.45 Reverse current Capacitance between terminals Reverse recovery time VR = 2 5V f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 ohm IR CT Trr uA pF nS 5 10 0.5 CDBQR42/43 QW-A1125 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Page 1 n Typ Max Unit IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 4 0.5 200 21 30 30 TSTG Tj Storage temperature Junction temperature O C O C +125 +125 -55 PD Power dissipation Thermal resistance junction to ambient air mW O C/W 125 667 R JA REV:B Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0402/SOD-923F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: CDBQR42 : BD C DBQR43 : BE - Mounting position: Any - Weight: 0.001 gram(approx.). Comchip Technology CO., LTD. 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. SMD Schottky Barrier Diode 0402/SOD-923F Io = 2 00 mA VR = 3 0 Volts RoHS Device |